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Research /
2026
Journal Article
Omotoso, E., Meyer, W. E., Sheppard, C. J., Igumbor, E. & Prinsloo, A. R. E. (2026): Analysis of Temperature‐Dependent Characteristics of Cr/P‐Doped Si Schottky Barrier Diodes before and after 5.4 MeV <sup>241</sup> Am Irradiation. - physica status solidi (a), 223(2).
Journal Article
Igumbor, E., Ajeh, P., Mapasha, E., Omotoso, E. & Raji, A. (2026): Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices. - Materials Science in Semiconductor Processing, 207, 110465.